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| Advance Product Information October 19, 2005 13 - 15 GHz 4W Power Amplifier Ceramic Flange Mounted Package Key Features * * * * * TGA8659-FL Frequency Range: 13 - 15 GHz >25 dB Nominal Gain >36 dBm Nominal Psat Bias 6 - 7.5V @ 1.3 - 1.6A Idq Package Dimensions: 0.33 x 0.70 x 0.12 in 8.4 x 17.8 x 3.0 mm Primary Applications * * The TriQuint TGA8569-FL is a packaged Power Amplifier delivering more than 4 Watts in the VSAT Band. The power amplifier works over the extended frequency range of 13 to 17 GHz and is designed using TriQuint's proven standard 0.5 um gate pHEMT production process. The TGA8659-FL provides a nominal gain greater than 25dB with excellent input and output VSWR. The TGA8659-FL is designed for KuBand VSAT transmitters and can also provide high power over a wider frequency band. Evaluation Boards are available upon request. Lead-free and RoHS compliant 27 25 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Ku-Band VSAT Transmit Point-to-Point Radio Fixtured Measured Performance Bias Conditions: Vd = 7V, Idq = 1.3A 5% 30 25 20 Gain (dB) 15 10 5 0 -5 -10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Bias Conditions: Vd = 7V, Idq = 1.3A 5 % Frequency at 14.5 GHz 37 35 Pout (dBm) 33 31 29 Pin (dBm) Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information October 19, 2005 TGA8659-FL TABLE I MAXIMUM RATINGS 1/ Symbol V+ I+ PD PIN TCH TM TSTG Parameter Positive Supply Voltage Positive Supply Current (Quiescent) Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value Notes 8V 1.7 A 2/ 13 W 24 dBm 3/, 4/ 150 C 260 C -65 C to 150 C 1/ These values represent the maximum operable values of this device 2/ Total current for the entire MMIC 3/ These ratings apply to each individual FET 4/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) Parameter Units Typical Drain Operating Voltage V 7 Quiescent Current A 1.3 Small Signal Gain dB 25 Gain Flatness (Freq = 13.5 - 15 GHz) dB/100MHz 0.1 Input Return Loss (Linear Small Signal) dB 10 Output Return Loss (Linear Small Signal) dB 10 Reverse Isolation dB > 50 CW Output Power @Psat at 14.5GHz dBm 36 TOI at 14.5 GHz with Pout/tone of 28 dBm dBm 41 Power Added Efficiency@Psat % 30 P1dB temperature coeff. TC (-40 to +70 C) dB/deg C -0.01 Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information October 19, 2005 TGA8659-FL Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 30 25 20 Gain (dB) 15 10 5 0 -5 -10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Bias Conditions: Vd = 7V, Idq = 1.3A 5 % Frequency at 14.5 GHz 37 35 Pout (dBm) 33 31 29 27 25 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin (dBm) Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information October 19, 2005 TGA8659-FL Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 0 Input Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information October 19, 2005 TGA8659-FL Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 40 38 36 34 P2dB (dBm) 32 30 28 26 24 22 20 11 12 13 14 15 16 17 18 19 Frequency (GHz) 60 P2dB PAE 55 50 45 40 35 30 25 20 15 10 PAE@P2dB (%) 5 Bias Conditions: Vd = 6V, Idq = 1.3A 5% 48 45 TO I (dBm ) 42 39 36 33 30 10 13 16 19 22 25 28 31 34 Fundamental output power per tone (dBm) Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice @14.5 GHz TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information October 19, 2005 TGA8659-FL Packaged Dimensional Drawing & %$ % $ $ $ $ ! #$ ( "$ " ' AA AAA # !$ $ % & AA A G@69AXD9UCA6I9AG@IBUCA ! '$ (AYA! '$ $ &' A$! #! !$ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information October 19, 2005 TGA8659-FL Note: Pins 6 and 10 are connected together internally Bias Procedure 1) Make sure no RF power is applied to the device before continuing. 2) Pinch off device by setting VG to -1.5V. 3) Raise VD to 7.0V while monitoring drain current. 4) Raise VG until drain current reaches 1.3 A. VG should be between -0.6V and -0.3V. 5) Apply RF power. Ordering Information Part TGA8659-FL Package Style Flange, leads bolted down GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information October 19, 2005 TGA8659-FL Evaluation Board and Schematic Vd (optional) 1 PF 0.01PF 6 RF In 3 10 0.01 PF 1 PF 10-30 PF tantalum (external) RF Out Vd TGA8659-FL 8 5 1,2,4,7,9 10 : Vg 1 PF 0.01 PF Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 |
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